(China (Mainland))
Product Summary
The 2SA1015-GR is a PNP Silicon Plastic-Encapsulate Transistor.
Parametrics
2SA1015-GR absolute maximum ratings: (1)V(BR)CEO Collector-Emitter Breakdown Voltage: 50Vdc; (2)V(BR)CBO Collector-Base Breakdown Voltage: 50Vdc; (3)ICBO Collector Cutoff Current: 0.1 uAdc; (4)IEBO Emitter Cutoff Current: 0.1 uAdc.
Features
2SA1015-GR features: (1)Capable of 0.4Watts of Power Dissipation.; (2)Collector-current: 0.15A; (3)Collector-base Voltage: 50V; (4)Operating and storage junction temperature range: -55OC to +125OC; (5)Epoxy meets UL 94 V-0 flammability rating; (6)Moisure Sensitivity Level 1; (7)Marking: A1015; (8)Lead Free Finish/Rohs Compliant (P Suffix designates Compliant. See ordering information).
Diagrams
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 2SA1015-GR |
Other |
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Data Sheet |
Negotiable |
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2SA1015-GR(F,T) |
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TRANS PNP 50V 150MA TO-92 |
Data Sheet |
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2SA1015-GR(TE2,F,T) |
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TRANS PNP 50V 150MA TO-92 |
Data Sheet |
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