Product Summary

The IRF7103 is a HEXFET Power MOSFET. The device utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of IRF7103 are 175℃ junction operating temperature, fast switching speed and improved repetitive avalanche rating.

Parametrics

IRF7103 absolute maximum ratings: (1)Continuous Drain Current, VGS @ 4.5V, ID @ TA = 25℃: 3.0A; (2)Continuous Drain Current, VGS @ 4.5V, ID @ TA = 70℃: 2.5A; (3)Pulsed Drain Current, IDM: 25A; (4)Power Dissipation, PD @TA = 25℃:2.4W; (5)Linear Derating Factor: 16W/℃; (6)Gate-to-Source Voltage, VGS: ±20V; (7)Single Pulse Avalanche Energy, EAS: 22mJ; (8)Avalanche Current, Iar: 2A; (9)Operating Junction and Storage Temperature Range, TJ/TSTG: -55 to 175℃.

Features

IRF7103 features: (1)Advanced Process Technology; (2)Dual N-Channel MOSFET; (3)Ultra Low On-Resistance; (4)175℃ Operating Temperature; (5)Repetitive Avalanche Allowed up to Tjmax; (6)Lead-Free.

Diagrams

IRF7103 top view

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
IRF7103
IRF7103

International Rectifier

MOSFET N-CH 50V 3A 8-SOIC

Data Sheet

1-570: $0.42
IRF7103I
IRF7103I

Other


Data Sheet

Negotiable 
IRF7103PBF
IRF7103PBF

International Rectifier

MOSFET

Data Sheet

0-1: $0.63
1-25: $0.37
25-100: $0.23
100-250: $0.21
IRF7103QPBF
IRF7103QPBF

International Rectifier

MOSFET

Data Sheet

Negotiable 
IRF7103IPBF
IRF7103IPBF

International Rectifier

MOSFET

Data Sheet

Negotiable 
IRF7103Q
IRF7103Q


MOSFET N-CH 50V 3A 8-SOIC

Data Sheet

Negotiable 
IRF7103TRPBF
IRF7103TRPBF

International Rectifier

MOSFET MOSFT DUAL NCh 50V 3.0A

Data Sheet

0-1: $0.63
1-25: $0.37
25-100: $0.23
100-250: $0.21
IRF7103QTRPBF
IRF7103QTRPBF

International Rectifier

MOSFET

Data Sheet

Negotiable