(China (Mainland))
Product Summary
The IRF7105TRPBF is a HEXFET Power MOSFET. The IRF7105TRPBF utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area.
Parametrics
IRF7105TRPBF absolute maximum ratings: (1)Continuous Drain Current, VGS @ 10V, ID @ TA = 25℃: 3.5A; (2)Continuous Drain Current, VGS @ 4.5V, ID @ TA = 70℃: 2.8A; (3)Pulsed Drain Current, IDM: 14A; (4)Power Dissipation, PD @TA = 25℃: 2.0W; (5)Linear Derating Factor: 0.016W/℃; (6)Gate-to-Source Voltage, VGS: ±20V; (7)Junction and Storage Temperature Range, TJ/TSTG: -55 to 175℃.
Features
IRF7105TRPBF features: (1)Advanced Process Technology; (2)Dual N and P-Channel MOSFET; (3)Ultra Low On-Resistance; (4)Fast switching; (5)available in tape and reel; (6)Lead-Free.
Diagrams
| Image | Part No | Mfg | Description |  |
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 IRF7105TRPBF |
International Rectifier |
MOSFET MOSFT DUAL N/PCh 25V 3.5A |
Data Sheet |
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