Product Summary

The IRF710PBF is a HEXFET Power MOSFET. The IRF710PBF provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

Parametrics

IRF710PBF absolute maximum ratings: (1)Drain-Source Voltage VDS: 400V; (2)Gate-Source Voltage VGS: ± 20V; (3)Continuous Drain Current VGS at 10 V, TC = 25 ℃, ID: 2.0A; TC = 100 ℃: 1.2 A; (4)Pulsed Drain Currenta IDM: 6.0; (5)Linear Derating Factor: 0.29 W/℃; (6)Single Pulse Avalanche Energyb EAS: 120 mJ; (7)Repetitive Avalanche Currenta IAR: 2.0 A; (8)Repetitive Avalanche Energya EAR: 3.6 mJ; (9)Maximum Power Dissipation TC = 25 ℃ PD: 36 W; (10)Peak Diode Recovery dV/dtc dV/dt: 4.0 V/ns; (11)Operating Junction and Storage Temperature Range TJ, Tstg: - 55 to + 150℃; (12)Soldering Recommendations (Peak Temperature) for 10 s: 300d; (13)Mounting Torque 6-32 or M3 screw: 10 lbf · in.

Features

IRF710PBF features: (1)Dynamic dV/dt Rating; (2)Repetitive Avalanche Rated; (3)Fast Switching; (4)Ease of Paralleling; (5)Simple Drive Requirements; (6)Compliant to RoHS Directive 2002/95/EC.

Diagrams

IRF710PBF Test Circuit

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
IRF710PBF
IRF710PBF
Vishay/Siliconix
MOSFET N-Chan 400V 2.0 Amp
Data Sheet
0-1: $0.55
1-10: $0.42
10-100: $0.37
100-250: $0.32
Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
IRF710
IRF710
Vishay/Siliconix
MOSFET N-Chan 400V 2.0 Amp
Data Sheet
0-730: $0.79
730-1000: $0.76
1000-2000: $0.74
2000-5000: $0.73
IRF710, SiHF710
IRF710, SiHF710
Other

Data Sheet
Negotiable 
IRF710_R4943
IRF710_R4943
Fairchild Semiconductor
MOSFET TO-220AB
Data Sheet
Negotiable 
IRF7101
IRF7101
International Rectifier
MOSFET N-CH 20V 3.5A 8-SOIC
Data Sheet
1-570: $0.45
IRF7101PBF
IRF7101PBF
International Rectifier
MOSFET
Data Sheet
0-1: $0.68
1-25: $0.40
25-100: $0.24
100-250: $0.23
IRF7101TR
IRF7101TR
International Rectifier
MOSFET N-CH 20V 3.5A 8-SOIC
Data Sheet
1-4000: $0.41