Product Summary

The IRF7313 is a HEXFET power MOSFET. Fifth generation HEXFET IRF7313 from international rectifier utilizes advanced processing techniques to achieve ectremely low on resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFET IRF7313 is well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

Parametrics

IRF7313 absolute maximum ratings: (1)Drain source voltage, VDS: 30V; (2)Gate source voltage, VGS: ±20V; (3)Continuous drain current, ID: TA=25℃, 6.5A; TA=70℃, 5.2A; (4)Pulsed drain current, IDM: 30A; (5)Power dissipation, PD: TA=25℃, 2.0W; TA=70℃, 1.3W; (6)Single pulse avalanche energy, EAS: 82mJ.

Features

IRF7313 features: (1)Generation V technology; (2)Ultra low on resistance; (3)Dual N channel MOSFET; (4)Surface mount; (5)Fully avalance rated; (6)Lead free.

Diagrams

IRF7313 top view

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
IRF7313
IRF7313

MOSFET 2N-CH 30V 6.5A 8-SOIC
Data Sheet
0-1: $1.42
1-10: $0.92
10-100: $0.71
100-250: $0.67
250-500: $0.63
500-1000: $0.60
1000-2500: $0.58
2500-10000: $0.53
IRF7313PBF
IRF7313PBF
International Rectifier
MOSFET
Data Sheet
0-1: $0.82
1-25: $0.50
25-100: $0.35
100-250: $0.30
IRF7313TRPBF
IRF7313TRPBF
International Rectifier
MOSFET MOSFT DUAL NCh 30V 6.5A
Data Sheet
0-1: $0.82
1-25: $0.50
25-100: $0.35
100-250: $0.33
IRF7313QPBF
IRF7313QPBF
International Rectifier
MOSFET
Data Sheet
Negotiable 
IRF7313QTRPBF
IRF7313QTRPBF
International Rectifier
MOSFET
Data Sheet
Negotiable 
IRF7313Q
IRF7313Q
Other

Data Sheet
Negotiable