(China (Mainland))
Product Summary
The IRF7316TR is a HEXFET power MOSFET. Fifth generation HEXFET IRF7316TR from international rectifier utilizes advanced processing techniques to achieve ectremely low on resistance per silicon area.
Parametrics
IRF7316TR absolute maximum ratings: (1)Drain source voltage, VDS: -30V; (2)Gate source voltage, VGS: ±20V; (3)Continuous drain current, ID: TA=25℃, -4.9A; TA=70℃, -3.9A; (4)Pulsed drain current, IDM: -30A; (5)Power dissipation, PD: TA=25℃, 2.0W; TA=70℃, 1.3W; (6)Single pulse avalanche energy, EAS: 140mJ.
Features
IRF7316TR features: (1)Generation V technology; (2)Ultra low on resistance; (3)Dual P channel MOSFET; (4)Surface mount; (5)Fully avalance rated.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
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 IRF7316TR |
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MOSFET 2P-CH 30V 4.9A 8-SOIC |
Data Sheet |
Negotiable |
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IRF7316TRPBF |
International Rectifier |
MOSFET MOSFT DUAL PCh -30V 4.9A |
Data Sheet |
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