(China (Mainland))
Product Summary
The IRF7726TR is a HEXFET Power MOSFET. The IRF7726TR utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design, that International Rectifier is well known for, provides the designer with an extremely efficient and reliable device for battery and load management.
Parametrics
IRF7726TR absolute maximum ratings: (1)Drain-Source Voltage: -30 V; (2)ID @ TA = 25℃ Continuous Drain Current, VGS @ -10V: -7.0A; (3)ID @ TA = 70℃ Continuous Drain Current, VGS @ -10V: -5.7 A; (4)IDM Pulsed Drain Current: -28; (5)PD @TA = 25℃ Maximum Power Dissipation: 1.79 W; (6)PD @TA = 70℃ Maximum Power Dissipation: 1.14 W; (7)Linear Derating Factor: 0.01 W/℃; (8)VGS Gate-to-Source Voltage: ±20 V; (9)TJ , TSTG Junction and Storage Temperature Range: -55 to +150 ℃.
Features
IRF7726TR features: (1)Ultra Low On-Resistance; (2)P-Channel MOSFET; (3)Very Small SOIC Package; (4)Low Profile (< 1.2mm); (5)Available in Tape & Reel.
Diagrams
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Pricing (USD) |
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 IRF7726TR |
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MOSFET P-CH 30V 7A MICRO8 |
Data Sheet |
Negotiable |
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IRF7726TRPBF |
International Rectifier |
MOSFET MOSFT PCh -30V -7A 26mOhm 46nC Micro 8 |
Data Sheet |
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