(China (Mainland))
Product Summary
The ISSI IS61C256AH-20N is a very high-speed, low power, 32,768 word by 8-bit static RAM. It is fabricated using ISSI high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 10 ns maximum. When CE is HIGH (deselected), the IS61C256AH-20N assumes a standby mode at which the power dissipation can be reduced down to 250 μW (typical) with CMOS input levels. Easy memory expansion is provided by using an active low chip enable (CE) input and an active low output enable (OE) input. The active low write enable (WE) controls both writing and reading of the memory. The IS61C256AH-20N is pin compatible with other 32K x 8 SRAMs and is available in 28-pin SOJ and TSOP(Type I) packages.
Parametrics
IS61C256AH-20N absolute maximum ratings: (1)VTERM Terminal Voltage with Respect to GND: –0.5 to +7.0 V; (2)TBIAS Temperature Under Bias: –55 to +125 ℃; (3)TSTG Storage Temperature: –65 to +150 ℃; (4)PT Power Dissipation: 1.5 W; (5)IOUT DC Output Current (LOW): 20 mA.
Features
IS61C256AH-20N features: (1)High-speed access time: 10, 12, 15, 20 ns; (2)Low active power: 400 mW (typical); (3)Low standby power; (4)250 μW (typical) CMOS standby; (5)55 mW (typical) TTL standby; (6)Fully static operation: no clock or refresh required; (7)TTL compatible inputs and outputs; (8)Single 5V power supply; (9)Lead-free available.
Diagrams
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